Memória HYPERX DDR3 4GB 1600MHz CL9 DIMM memória Kit KHX1600C9D3B1K2_4G Technikai adatlap

Tech. Spec. Info : KHX1600C9D3K2/4G
4GB (2GB 256M x 64-Bit x 2 pcs.) DDR3-1600MHz
CL9 240-Pin DIMM Kit

DESCRIPTION:
Kingston's KHX1600C9D3K2/4G is a kit of two 256M x 64-bit 2GB (2048MB) DDR3-1600MHz CL9 SDRAM
(Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Total kit
capacity is 4GB. Each module kit has been tested to run at DDR3-1600MHz at a low latency timing of 9-9-9-27 at 1.7V
to 1.9V. The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 240-pin
DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are
as follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.800 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C

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